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har dwar e documentation p r o g r a m m a b l e l i n e a r h a l l - e f f e c t s e n s o r hal ? 810 edition feb. 6, 2009 dsh000034_003en data sheet
HAL810 data sheet 2 feb. 6, 2009; dsh000034_003en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringements or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this doc- ument and to make changes to the document?s con- tent at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, aviation and aerospace applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applica- tions intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ?hal micronas patents ? choppered offset compensation protected by micronas patents no. us5260614, us5406202, ep0525235 and ep05458391. ? vdd modulation protected by micronas patent no. ep0953848 third-party trademarks all other brand and product names or company names may be trademarks of their respective companies.
contents page section title micronas feb. 6, 2009; dsh000034_003en 3 data sheet HAL810 4 1. introduction 4 1.1. major applications 4 1.2. features 5 1.3. marking code 5 1.4. operating junction temperature range (t j ) 5 1.5. hall sensor package codes 5 1.6. solderability and welding 5 1.7. pin connections and short descriptions 6 2. functional description 6 2.1. general function 8 2.2. digital signal processing and eeprom 10 2.3. calibration procedure 10 2.3.1. general procedure 11 2.4. calibration of the angle sensor 13 3. specifications 13 3.1. outline dimensions 17 3.2. dimensions of sensitive area 17 3.3. positions of sensitive areas 17 3.3.1. storage and shelf life 18 3.4. absolute maximum ratings 18 3.5. recommended operating conditions 19 3.6. characteristics 20 3.7. magnetic characteristics 20 3.8. open-circuit detection 20 3.9. typical characteristics 22 4. application notes 22 4.1. application circuit 22 4.2. measurement of a pwm output signal 23 4.3. temperature compensation 24 4.4. undervoltage behavior 24 4.5. ambient temperature 24 4.6. emc and esd 25 5. programming of the sensor 25 5.1. definition of programming pulses 25 5.2. definition of the telegram 27 5.3. telegram codes 28 5.4. number formats 29 5.5. register information 29 5.6. programming information 30 6. data sheet history
HAL810 data sheet 4 feb. 6, 2009; dsh000034_003en micronas programmable linear hall-effect sensor release note: revision bars indicate significant changes to the previous edition. 1. introduction the HAL810 is a member of the micronas family of programmable linear hall sensors. the linear output is provided as the duty cycle of a pulse-width modulated output signal (pwm signal). the HAL810 is a universal magnetic field sensor with a linear output based on the hall effect. the ic is designed and produced in sub-micron cmos technol- ogy and can be used for angle or distance measure- ments if combined with a rotating or moving magnet. the major characteristics, such as magnetic field range, sensitivity, output quiescent signal (output duty cycle at b = 0 mt), and output duty cycle range are programmable in a non-volatile memory. the HAL810 features a temperature-compensated hall plate with choppered offset compensation, an a/d converter, digital signal processing, an eeprom memory with redundancy and lock function for the cali- bration data, a serial interface for programming the eeprom, and protection devices at all pins. the inter- nal digital signal processing is of great benefit as ana- log offsets, temperature shifts, and mechanical stress do not lower the sensor accuracy. the HAL810 is programmable by modulating the sup- ply voltage. no additional programming pin is needed. the easy programmability allows a 2-point calibration by adjusting the output signal directly to the input sig- nal (like mechanical angle, distance, or current). indi- vidual adjustment of each sensor during the cus- tomer?s manufacturing process is possible. with this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be com- pensated in the final assembly. this offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. in addition, the temperature compensation of the hall ic can be suited to all common magnetic materials by programming first and second order temperature coef- ficients of the hall sensor sensitivity. this enables operation over the full temperature range with high accuracy. the calculation of the individual sensor characteristics and the programming of the eeprom memory can easily be done with a pc and the application kit from micronas. the sensor is designed for hostile industrial and auto- motive applications and operates with a supply volt- age of typically 5 v in the ambient temperature range from ? 40 c up to 150 c. the HAL810 is available in the very small leaded packages to92ut-1 and to92ut-2. 1.1. major applications due to the sensor?s versatile programming character- istics, the HAL810 is the optimal system solution for applications such as: ? contactless potentiometers, ? rotary sensors, ? distance measurements, ? magnetic field and current measurement. 1.2. features ? high-precision linear hall effect sensor with digital signal processing ? pwm output signal with a refresh rate of typically 125 hz and up to 11 bit resolution ? multiple programmable magnetic characteristics in a non-volatile memory (eeprom) with redundancy and lock function ? open-circuit feature (ground and supply line break detection) ? temperature characteristics programmable for matching all common magnetic materials ? programmable clamping function ? programming via modulation of the supply voltage ? operation from ? 40 c up to 150 c ambient tem- perature ? operation with 4.5 v to 5.5 v supply voltage in spec- ification and functions with up to 8.5 v ? operation with static magnetic fields and dynamic magnetic fields ? overvoltage and reverse-voltage protection at all pins ? magnetic characteristics extremely robust against mechanical stress ? short-circuit protected push-pull output ? emc and esd optimized design
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 5 1.3. marking code the HAL810 has a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. 1.4. operating junction temperature range (t j ) the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). a: t j = ? 40 c to +170 c k: t j = ? 40 c to +140 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 4.5. on page 24. 1.5. hall sensor package codes example: HAL810ut-k type: 810 package: to92ut temperature range: t j = ? 40 c to +140 c hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ?hall sensors: ordering codes, packaging, handling?. 1.6. solderability and welding soldering during soldering, reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. welding device terminals should be compatible with laser and resistance welding. please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. a very close control of the welding parameters is absolutely necessary in order to reach satisfying results. micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. pin connections and short descriptions fig. 1?1: pin configuration type temperature range a k HAL810 810a 810k halxxxpa-t temperature range: a or k package: ut for to92ut-1/-2 type: 810 pin no. pin name type short description 1 vdd in supply voltage and programming pin 2 gnd ground 3 out out push-pull output 1 3 v dd out gnd 2
HAL810 data sheet 6 feb. 6, 2009; dsh000034_003en micronas 2. functional description 2.1. general function the HAL810 is a monolithic integrated circuit which provides a pulse-width modulated output signal (pwm). the duty cycle of the pwm signal is propor- tional to the magnetic flux through the hall plate. the external magnetic field component perpendicular to the branded side of the package generates a hall voltage. the hall ic is sensitive to magnetic north and south polarity. this voltage is converted to a digital value, processed in the digital signal processing unit (dsp) according to the settings of the eeprom regis- ters, converted to a pulse-width modulated output sig- nal, and stabilized by a push-pull output transistor stage. the function and the parameters for the dsp are explained in section 2.2. on page 8. the setting of the lock register disables the program- ming of the eeprom memory for all time. this regis- ter cannot be reset. as long as the lock register is not set, the output characteristics can be adjusted by programming the eeprom registers. the ic is addressed by modulat- ing the supply voltage (see fig. 2?1). in the supply voltage range from 4.5 v to 5.5 v, the sensor gener- ates a pwm output signal. after detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. the pwm output is switched off during the communication. the open-circuit detection provides a defined output voltage if the v dd or gnd line is broken. internal tem- perature compensation circuitry and the choppered off- set compensation enables operation over the full tem- perature range with minimal changes in accuracy and high offset stability. the circuitry also rejects offset shifts due to mechanical stress from the package. the non-volatile memory consists of redundant eeprom cells. in addition, the sensor ic is equipped with devices for overvoltage and reverse-voltage protection at all pins. fig. 2?1: programming with v dd modulation fig. 2?2: HAL810 block diagram v out (v) 5 6 7 8 v dd (v) hal 810 v dd gnd out pwm v dd digital protocol internally temperature oscillator switched 100 digital output opa out v dd gnd supply eeprom memory lock control digital stabilized supply and protection devices dependent bias protection devices hall plate signal processing conditioning level detection output a/d converter 10 k open-circuit detection
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 7 fig. 2?3: details of eeprom and digital signal processing mode register filter tc 6 bit tcsq 5 bit dcoq 11 bit min- 10 bit 11 bit lock 1 bit 3 bit range 3 bit eeprom memory a/d converter digital filter multiplier adder limiter output conditioning digital signal processing adc-readout register 14 bit digital lock control duty max- duty output micronas registers dcsensitivity 14 bit 0 20 40 60 80 100 ?40 ?30 ?20 ?10 0 10 20 30 40 mt % b output duty cycle dc oq = 50% max-duty = 97% dcsensitivity = 0.3 min-duty = 3% range = 30 mt filter = 500 hz fig. 2?4: example for output characteristics 0 20 40 60 80 100 ?150 ?100 ?50 0 50 100 150 mt % b max-out = 90% dcsensitivity = -1.36 dc = -10% min-out = 10% range = 100 mt filter = 2 khz oq output duty cycle fig. 2?5: example for output characteristics
HAL810 data sheet 8 feb. 6, 2009; dsh000034_003en micronas 2.2. digital signal processing and eeprom the dsp is the main part of this sensor and performs the signal conditioning. the parameters for the dsp are stored in the eeprom registers. the details are shown in fig. 2?3. terminology: min-duty: name of the register or register value min-duty: name of the parameter the eeprom registers consist of three groups: group 1 contains the registers for the adaptation of the sensor to the magnetic circuit: mode for selecting the magnetic field range and filter frequency, tc and tcsq for the temperature characteristics of the mag- netic sensitivity. group 2 contains the registers for defining the output characteristics: dcsensitivity, dcoq, min-duty, and max-duty. the output characteristic of the sen- sor is defined by these four parameters (see fig. 2?5 and fig. 2?6 for examples). ? the parameter dc oq (output quiescent duty cycle) corresponds to the duty cycle at b = 0 mt. ? the parameter dcsensitivity defines the magnetic sensitivity: ? the output duty cycle can be calculated as follows: the output duty cycle range can be clamped by setting the registers min-duty and max-duty in order to enable failure detection (such as short-circuits to v dd or gnd and open connections). group 3 contains the micronas registers and lock for the locking of all registers. the micronas registers are programmed and locked during production and are read-only for the customer. these registers are used for oscillator frequency trimming, a/d converter offset compensation, and several other settings. an external magnetic field generates a hall voltage on the hall plate. the adc converts the amplified positive or negative hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. positive values correspond to a mag- netic north pole on the branded side of the package. the digital signal is filtered in the internal low-pass fil- ter and is readable in the adc-readout register. depending on the programmable magnetic range of the hall ic, the operating range of the a/d converter is from ? 30 mt?+30 mt up to ? 150 mt?+150 mt. during further processing, the digital signal is multi- plied with the sensitivity factor, added to the quiescent output duty cycle and limited according to min-duty and max-duty. the result is converted to the duty cycle of a pulse width modulated signal and stabilized by a push-pull output transistor stage. the adc-readout at any given magnetic field depends on the programmed magnetic field range but also on the filter frequency. fig. 2?6 shows the typical adc-readout values for the different magnetic field ranges with the filter frequency set to 2 khz. the rela- tionship between the minimum and maximum adc-readout values and the filter frequency setting is listed in the following table. dc out * 2048 adc-readout * 100% dcsensitivity = dc out = dcsensitivity * adc-readout / 2048 * 100% + dc oq filter frequency adc-readout range 80 hz ? 3968 3967 160 hz ? 1985 1985 500 hz ? 5292 5290 1khz ? 2646 2645 2khz ? 1512 1511 ?2000 ?1500 ?1000 ?500 0 500 1000 1500 2000 ?200?150?100 ?50 0 50 100 150 200 mt b adc- readout range 150 mt filter = 2 khz range 90 mt range 60 mt range 30 mt fig. 2?6: example for output characteristics
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 9 note: during application design, it should be taken into consideration that the maximum and minimum adc-readout is not exceeded during calibra- tion and operation of the hall ic. consequently, the maximum and minimum magnetic fields that may occur in the operational range of a specific application should not saturate the a/d converter. please note that the a/d converter saturates at magnetic fields well above, respectively below, the magnetic range limits. this large safety band between specified magnetic range and true oper- ational range helps to avoid saturation. range the range bits are the three lowest bits of the mode register; they define the magnetic field range of the a/d converter. filter the filter bits are the three highest bits of the mode register; they define the ? 3 db frequency of the digital low pass filter. tc and tcsq the temperature dependence of the magnetic sensitiv- ity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. the adaptation is done by programming the tc (temperature coefficient) and the tcsq registers (quadratic temperature coeffi- cient). thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assem- bly. as a result, the output characteristic can be fixed over the full temperature range. the sensor can com- pensate for linear temperature coefficients ranging from about ? 3100 ppm/k up to 400 ppm/k and qua- dratic coefficients from about ? 5 ppm/k2 to 5 ppm/k2. please refer to section 4.3. on page 23 for the recom- mended settings for different linear temperature coeffi- cients. dcsensitivity the dcsensitivity register contains the parameter for the multiplier in the dsp. the dcsensitivity is pro- grammable between ? 4 and 4. the register can be changed in steps of 0.00049. dcsensitivity = 1 corre- sponds to an increase of the output duty cycle by 100% if adc-readout increases by 2048. for all calculations, the di gital value of the a/d con- verter is used. this digital information is derived from the magnetic signal and is readable from the adc-readout register. dc oq the dcoq register contains the parameter for the adder in the dsp. dc oq is the output duty cycle with- out external magnetic field (b = 0 mt, respectively adc-readout = 0) and programmable from ? 100% to 100%. the register can be changed in steps of 0.0976%. note: if dc oq is programmed as negative values, the maximum output duty cycle is limited to: for calibration in the system environment, a 2-point adjustment procedure (see section 2.3.) is recom- mended. the suitable dcsensitivity and dc oq values for each sensor can be calculated individually by this procedure. magnetic field range range ? 30 mt 30 mt 0 ? 40 mt 40 mt 4 ? 60 mt 60 mt 5 ? 75 mt 75 mt 1 ? 80 mt 80 mt 6 ? 90 mt 90 mt 2 ? 100 mt 100 mt 7 ? 150 mt 150 mt 3 ? 3 db frequency filter 80 hz 0 160 hz 1 500 hz 2 1khz 3 2khz 4 dc out * 2048 adc-readout * 100% dcsensitivity = dc outmax = dc oq +100%
HAL810 data sheet 10 feb. 6, 2009; dsh000034_003en micronas clamping function the output duty cycle range can be clamped in order to detect failures like shorts of the output signal to v dd or gnd or an open circuit. the min-duty register contains the parameter for the lower limit. the minimum duty cycle is programmable between 0% and 50% in steps of 0.0488%. the max-duty register contains the parameter for the upper limit. the maximum duty cycle is program- mable between 0% and 100% in steps of 0.0488%. lockr by setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. this bit is active after the first power-off and power-on sequence after setting the lock bit. warning: this register cannot be reset! adc-readout this 14-bit register delivers the actual digital value of the applied magnetic field before the signal process- ing. this register can be read out and is the basis for the calibration procedure of the sensor in the system environment. 2.3. calibration procedure 2.3.1. general procedure for calibration in the system environment, the applica- tion kit from micronas is recommended. it contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. in this section, programming of the sensor using this programming tool is explained. please refer to section 5. on page 25 for information about program- ming without this tool. for the individual calibration of each sensor in the cus- tomer application, a two-point adjustment is recom- mended (see fig. 2?7 for an example). when using the application kit, the calibration can be done in three steps: step 1: input of the registers which need not be adjusted individually the magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping duty cycles are given for this application. therefore, the values of the following registers should be identical for all sensors of the customer application. ?filter (according to the maximum signal frequency) ? range (according to the maximum magnetic field at the sensor position) ? tc and tcsq (depends on the material of the magnet and the other temperature dependencies of the application) ? min-duty and max-duty (according to the application requirements) write and store the appropriate settings into the HAL810 registers.
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 11 step 2: calculation of dc oq and dcsensitivity the calibration points 1 and 2 can be set inside the specified range. the corresponding values for dc 1 and dc 2 result from the application requirements. for highest accuracy of the sensor, calibration points near the minimum and maximum input signal are rec- ommended. the difference of the duty cycle between calibration point 1 and calibration point 2 should be more than 70%. set the system to calibration point 1 and read the reg- ister adc-readout. the result is adc-readout1. now, set the system to calibration point 2, read the register adc-readout, and get adc-readout2. with these readouts and the nominal duty cycles dc 1 and dc 2 , for the calibration points 1 and 2, respec- tively, the values for dcsensitivity and dcoq are cal- culated as follows: this calculation has to be done individually for each sensor. next, write and store the calculated values for dcsen- sitivity and dc oq into the ic for adjusting the sensor. the sensor is now calibrated for the customer applica- tion. however, the programming can be changed again and again if necessary. step 3: locking the sensor the last step is activating the lock function with the ?lock? command. please note that the lock function becomes effective after power-down and power-up of the hall ic. the sensor is now locked and does not respond to any programming or reading commands. warning: this register cannot be reset! 2.4. calibration of the angle sensor the following description explains the calibration pro- cedure using an angle sensor as an example. the required output characteristic is shown in fig. 2?7. ? the angle range is from ? 25 to 25 ? temperature coefficient of the magnet: ? 500 ppm/k min-duty dc 1,2 max-duty dc2 ? dc1 adc-readout2 ? adc-readout1 dcsensitivity = 100% 2048 * adc-readout1 * dcsensitivity * 100% 2048 dc oq = dc 1 ? 0 20 40 60 80 100 ?30 ?20 ?10 0 10 20 30 angle % output duty cycle max-duty = 95% calibration point 1 min-duty = 5% calibration point 2 fig. 2?7: example for output characteristics
HAL810 data sheet 12 feb. 6, 2009; dsh000034_003en micronas step 1: input of the registers which need not be adjusted individually the register values for the following registers are given for all applications: ?filter select the filter frequency: 500 hz ?range select the magnetic field range: 30 mt ?tc for this magnetic material: 6 ?tcsq for this magnetic material: 14 ?min-duty for our example: 5% ? max-duty for our example: 95% enter these values in the software, and use the ?write and store? command for permanently writing the val- ues in the registers. step 2: calculation of dc oq and dcsensitivity there are two ways to calculate the values for dc oq and dcsensitivity. manual calculation: set the system to calibration point 1 (angle 1 = ? 25) and read the register adc-readout. for our exam- ple, the result is adc-readout1 = ? 2500. next, set the system to calibration point 2 (angle 2 = 25), and read the register adc-readout again. for our example, the result is adc-readout2 = + 2350. with these measurements and the targets dc 1 = 95% and dc 2 = 5%, the values for dcsensitivity and dc oq are calculated as follows software calibration: use the menu calibrate from the pc software and enter the values 95% for dc 1 and 5% for dc 2 . set the system to calibration point 1 (angle 1 = ? 25), press the key ?read adc-readout1?, set the system to cali- bration point 2 (angle 2 = 25), press the key ?read adc-readout2?, and hit the button ?calculate?. the software will then calculate the appropriate dc oq and dcsensitivity. this calculation has to be done individually for each sensor. now, write the calculated values with the ?write and store? command into the HAL810 for program- ming the sensor. step 3: locking the sensor the last step is to activate the lock function with the ?lock? command. please note that the lock function becomes effective after power-down and power-up of the hall ic. the sensor is now locked and does not respond to any programming or reading commands. warning: this register cannot be reset! 5% ? 95% 2350 + 2500 dcsensitivity = 100% 2048 * = ? 0.3800 dc oq = 95% ? 2048 ? 2500* (? 0.3800)*100% = 48.61%
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 13 3. specifications 3.1. outline dimensions fig. 3?1: to92ut-2 : plastic transistor standard ut package, 3 leads, not spread weight approximately 0.12 g
HAL810 data sheet 14 feb. 6, 2009; dsh000034_003en micronas fig. 3?2: to92ut-1 : plastic transistor standard ut package, 3 leads, spread weight approximately 0.12 g
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 15 fig. 3?3: to92ut-2 : dimensions ammopack inline, not spread
HAL810 data sheet 16 feb. 6, 2009; dsh000034_003en micronas fig. 3?4: to92ut-1 : dimensions ammopack inline, spread
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 17 3.2. dimensions of sensitive area 0.25 mm x 0.25 mm 3.3. positions of sensitive areas 3.3.1. storage and shelf life the permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 c and a maximum of 85% relative humidity. at these conditions, no dry pack is required. solderability is guaranteed for one year from the date code on the package. to92ut-1/-2 x center of the package y 1.5 mm nominal a4 0.3 mm nominal bd 0.3 mm
HAL810 data sheet 18 feb. 6, 2009; dsh000034_003en micronas 3.4. absolute maximum ratings stresses beyond those listed in the ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these conditions is not implied. exposure to absolute maximum rating conditions for extended periods will affect device reliability. this device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this high-impedance circuit. all voltages listed are referenced to ground (gnd). 3.5. recommended operating conditions functional operation of the device beyond those indicated in the ?recommended operating conditions/characteris- tics? is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. all voltages listed are referenced to ground (gnd). symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 8.5 8.5 v v dd supply voltage 1 ? 14.4 1) 2) 14.4 1) 2) v ? i dd reverse supply current 1 ? 50 1) ma v out output voltage 3 ? 5 5) ? 5 5) 8.5 3) 14.4 3) 2) v v out ? v dd excess of output voltage over supply voltage 3,1 ? 2v i out continuous output current 3 ? 10 10 ma t sh output short circuit duration 3 ? 10 min t j junction temperature range ? 40 ? 40 170 4) 150 c c n prog number of programming cycles ? 100 1) as long as t jmax is not exceeded 2) t<10min (v ddmin = ? 15 v for t < 1 min, v ddmax =16v for t<1min) 3) as long as t jmax is not exceeded, output is not protected to external 14 v-line (or to ? 14 v) 4) t < 1000 h 5) internal protection resistor = 100 symbol parameter pin no. min. typ. max. unit v dd supply voltage 1 4.5 5 5.5 v i out continuous output current 3 ? 1 ? 1ma r l load resistor 3 10 ?? k c l load capacitance 3 0.33 10 100 nf
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 19 3.6. characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 5.5 v, gnd = 0 v after programming and locking of the device, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 5 v. symbol parameter pin no. min. typ. max. unit conditions i dd supply current over temperature range 1 ? 710ma v ddz overvoltage protection at supply 1 ? 17.5 20 v i dd =25ma, t j =25c, t=20ms v oz overvoltage protection at output 3 ? 17 19.5 v i o =10ma, t j =25c, t=20ms output duty cycle resolution 3 ?? 11 bit 1) inl non-linearity of output duty cycle over temperature 3 ? 0.5 0 0.5 % 2) t k variation of linear temperature coefficient 3 ? 400 0 400 ppm/k if tc and tcsq suitable for the application dc min-duty accuracy of minimum duty cycle over temperature range 3 ? 101% dc max- duty accuracy of maximum duty cycle over temperature range 3 ? 101% v outh output high voltage 3 ? 4.8 ? v v dd =5v, ? 1ma i out 1 ma v outl output low voltage 3 ? 0.2 ? v v dd =5v, ? 1ma i out 1ma f pwm pwm output frequency over temperature range ? 105 125 145 hz f adc internal adc frequency over temperature range ? 110 128 150 khz t pod power-up time (time to reach valid duty cycle) ??? 25 ms r out output resistance over recommended operating range 3 ? 110 v outlmax v out v outhmin to92ut package r thja r thjc thermal resistance junction to ambient junction to case ? ? ? ? ? 235 61 measured on an 1s0p board 1) if the hall ic is programmed accordingly 2) if more than 50% of the selected magnetic field range are used
HAL810 data sheet 20 feb. 6, 2009; dsh000034_003en micronas 3.7. magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 5.5 v, gnd = 0 v after programming and locking of the device, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 5 v. 3.8. open-circuit detection at t j = ? 40 c to +170 c, typical characteristics for t j = 25 c 3.9. typical characteristics symbol parameter pin no. min. typ. max. unit conditions b offset magnetic offset 3 ? 0.5 0 0.5 mt b = 0 mt, t j = 25 c, unadjusted sensor b offset / t magnetic offset change due to t j ? 10 0 10 t/k b = 0 mt symbol parameter pin no. min. typ. max. unit conditions v out output voltage at open v dd line 3 000.2v v dd = 5 v r l = 10 k to gnd v out output voltage at open gnd line 34.74.85vv dd = 5 v r l = 10 k to gnd ?20 ?15 ?10 ?5 0 5 10 15 20 ?15 ?10 ?5 0 5 10 15 20 v ma v dd i dd t a = ?40 c t a = 25 c t a =150 c fig. 3?5: typical current consumption versus supply voltage 0 2 4 6 8 10 ?50 0 50 100 150 200 c ma t a i dd v dd = 5 v fig. 3?6: typical current consumption versus ambient temperature
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 21 0 2 4 6 8 10 ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 ma ma i out i dd t a = 25 c v dd = 5 v fig. 3?7: typical current consumption versus output current ?1 ?0.8 ?0.6 ?0.4 ?0.2 ?0.0 0.2 0.4 0.6 0.8 1.0 ?50 0 50 100 150 200 c mt t a b offset tc = 16, tcsq = 8 tc = 0, tcsq = 12 tc = ?20, tcsq = 12 fig. 3?8: typical magnetic offset versus ambient temperature 0 20 40 60 80 100 120 ?50 0 50 100 150 200 c % t a 1/sensitivity tc = 16, tcsq = 8 tc = 0, tcsq = 12 tc = ?20, tcsq = 12 tc = ?31, tcsq = 0 fig. 3?9: typical 1/sensitivity versus ambient temperature ?1 ?0.8 ?0.6 ?0.4 ?0.2 ?0.0 0.2 0.4 0.6 0.8 1.0 ?40 ?20 0 20 40 mt % b inl range = 30 mt fig. 3?10: typical nonlinearity versus magnetic field
HAL810 data sheet 22 feb. 6, 2009; dsh000034_003en micronas 4. application notes 4.1. application circuit for emc protection, it is recommended to connect one ceramic 4.7 nf capacitor each between ground and the supply voltage, respectively the output pin. in addi- tion, the input of the controller unit should be pulled- down with a 10 k resistor and a ceramic 4.7 nf capacitor. please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 v for 100 ms. all components connected to the v dd line at this time must be able to resist this voltage. fig. 4?1: recommended application circuit 4.2. measurement of a pwm output signal the magnetic field information is coded in the duty cycle of the pwm signal. the duty cycle is defined as the ratio between the high time ?s? and the period ?d? of the pwm signal (see fig. 4?2). please note: the pwm signal is updated with the fall- ing edge. if the duty cycle is evaluated with a micro- controller, the trigger-level will be the falling edge of the pwm signal. fig. 4?2: definition of pwm signal out v dd gnd 4.7 nf HAL810 10 k c 4.7 nf 4.7 nf update out time v high v low d s
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 23 4.3. temperature compensation the relationship between the temperature coefficient of the magnet and the corresponding tc and tcsq codes for linear compensation is given in the following table. in addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. for this purpose, other tc and tcsq combi- nations are required which are not shown in the table. please contact micronas for more detailed information on this higher order temperature compensation. the hal8x5 and HAL810 contain the same tempera- ture compensation circuits. if an optimal setting for the hal8x5 is already available, the same settings may be used for the HAL810. temperature coefficient of magnet (ppm/k) tc tcsq 400 31 6 300 28 7 200 24 8 100 21 9 01810 ? 50 17 10 ? 90 16 11 ? 130 15 11 ? 170 14 11 ? 200 13 12 ? 240 12 12 ? 280 11 12 ? 320 10 13 ? 360 9 13 ? 410 8 13 ? 450 7 13 ? 500 6 14 ? 550 5 14 ? 600 4 14 ? 650 3 14 ? 700 2 15 ? 750 1 15 ? 810 0 15 ? 860 ? 116 ? 910 ? 216 ? 960 ? 316 ? 1020 ? 417 ? 1070 ? 517 ? 1120 ? 617 ? 1180 ? 718 ? 1250 ? 818 ? 1320 ? 919 ? 1380 ? 10 19 ? 1430 ? 11 20 ? 1500 ? 12 20 ? 1570 ? 13 20 ? 1640 ? 14 21 ? 1710 ? 15 21 ? 1780 ? 16 22 ? 1870 ? 17 22 ? 1950 ? 18 23 ? 2030 ? 19 23 ? 2100 ? 20 24 ? 2180 ? 21 24 ? 2270 ? 22 25 ? 2420 ? 24 26 ? 2500 ? 25 27 ? 2600 ? 26 27 ? 2700 ? 27 28 ? 2800 ? 28 28 ? 2900 ? 29 29 ? 3000 ? 30 30 ? 3100 ? 31 31 temperature coefficient of magnet (ppm/k) tc tcsq
HAL810 data sheet 24 feb. 6, 2009; dsh000034_003en micronas 4.4. undervoltage behavior in a voltage range of below 4.5 v to approximately 3.5 v, the typical operation of the HAL810 is given and predictable for most sensors. some of the parameters may be out of the specification. below about 3.5 v, the digital processing is reset. if the supply voltage rises above approx. 3.5 v once again, a startup time of about 20 s elapses, for the digital signal processing to occur. 4.5. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). t j = t a + t at static conditions and continuous operation, the fol- lowing equation applies: t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the maximum parameters for i dd and r th , and the maximum value for v dd from the application. for v dd = 5.5 v, r th = 235 k/w, and i dd = 10 ma the temperature difference t = 12.93 k. for all sensors, the junction temperature t j is speci- fied. the maximum ambient temperature t amax is cal- culated as follows: t amax = t jmax ? t 4.6. emc and esd the HAL810 is designed for a stabilized 5 v supply. interferences and disturbances conducted along the 12 v on-board system (product standard iso 7637 part 1) are not relevant for these applications. for applications with disturbances by capacitive or inductive coupling on the supply line or radiated distur- bances, the application circuit shown in fig. 4?1 is rec- ommended. applications with this arrangement passed the emc tests according to the product stan- dard iso 7637 part 3 (electrical transient transmission by capacitive or inductive coupling). please contact micronas for the detailed investigation reports with the emc and esd results.
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 25 5. programming of the sensor 5.1. definition of programming pulses the sensor is addressed by modulating a serial tele- gram on the supply voltage. the sensor answers with a serial telegram on the output pin. the bits in the serial telegram have a different bit time for the v dd -line and the output. the bit time for the v dd -line is defined through the length of the sync bit at the beginning of each telegram. the bit time for the output is defined through the acknowledge bit. a logical ?0? is coded as no voltage change within the bit time. a logical ?1? is coded as a voltage change between 50% and 80% of the bit time. after each bit, a voltage change occurs. 5.2. definition of the telegram each telegram starts with the sync bit (logical 0), 3 bits for the command (com), the command parity bit (cp), 4 bits for the address (adr), and the address parity bit (ap). there are different telegram formats: ? write a register (see fig. 5?2) after the ap bit, follow 14 data bits (dat) and the data parity bit (dp). if the telegram is valid and the command has been processed, the sensor answers with an acknowledge bit (logical 0) on the output. ? read a register (see fig. 5?3) after evaluating this command, the sensor answers with the acknowledge bit, 14 data bits, and the data parity bit on the output. ? programming the eeprom cells (see fig. 5?4) after evaluating this command, the sensor answers with the acknowledge bit. after the delay time t w , the supply voltage rises up to the programming volt- age. fig. 5?1: definition of logical 0 and 1 bit t r t f t p0 t p0 logical 0 v ddh v ddl or t p0 logical 1 v ddh v ddl or t p0 t p1 t p1 table 5?1: telegram parameters symbol parameter pin min. typ. max. unit remarks v ddl supply voltage for low level during programming 155.66v v ddh supply voltage for high level during programming 1 6.8 8.0 8.5 v t r rise time 1 ?? 0.05 ms t f fall time 1 ?? 0.05 ms t p0 bit time on v dd 1 1.7 1.75 1.8 ms t p0 is defined through the sync bit t pout bit time on output pin 3 2 3 4 ms t pout is defined through the acknowledge bit t p1 voltage change for logical 1 1, 3 50 65 80 % % of t p0 or t pout v ddprog supply voltage for programming the eeprom 1 12.4 12.5 12.6 v t prog programming time for eeprom 1 95 100 105 ms t rp rise time of programming voltage 1 0.2 0.5 1 ms t fp fall time of programming voltage 1 0 ? 1ms t w delay time of programming voltage after acknowledge 10.50.71ms
HAL810 data sheet 26 feb. 6, 2009; dsh000034_003en micronas fig. 5?2: telegram for coding a write command fig. 5?3: telegram for coding a read command fig. 5?4: telegram for coding the eeprom programming sync com cp adr ap dat dp acknowledge v dd v out write sync com cp adr ap dat dp acknowledge v dd v out read sync com cp adr ap t prog acknowledge v dd v out erase, prom, and lock t rp t fp t w v ddprog
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 27 5.3. telegram codes sync bit each telegram starts with the sync bit. this logical ?0? pulse defines the exact timing for t p0 . command bits (com) the command code contains 3 bits and is a binary number. table 5?2 shows the available commands and the corresponding codes for the HAL810. command parity bit (cp) this parity bit is ?1? if the number of zeros within the 3 command bits is uneven. the parity bit is ?0?, if the number of zeros is even. address bits (adr) the address code contains 4 bits and is a binary num- ber. table 5?3 shows the available addresses for the HAL810 registers. address parity bit (ap) this parity bit is ?1? if the number of zeros within the four address bits is uneven. the parity bit is ?0? if the number of zeros is even. data bits (dat) the 14 data bits contain the register information. the registers use different number formats for the data bits. these formats are explained in section 5.4. in the write command, the last bits are valid. if, for example, the tc register (6 bits) is written, only the last 6 bits are valid. in the read command, the first bits are valid. if, for example, the tc register (6 bits) is read, only the first 6 bits are valid. data parity bit (dp) this parity bit is ?1? if the number of zeros within the binary number is even. the parity bit is ?0? if the num- ber of zeros is uneven. acknowledge after each telegram, the output answers with the acknowledge signal. this logical ?0? pulse defines the exact timing for t pout . table 5?2: available commands command code explanation read 2 read a register write 3 write a register prom 4 program all nonvolatile registers (except the lock bits) erase 5 erase all nonvolatile registers (except the lock bits) lock 7 lock the whole device and disable programming
HAL810 data sheet 28 feb. 6, 2009; dsh000034_003en micronas 5.4. number formats binary number: the most significant bit is given as first, the least sig- nificant bit as last digit. example: 101001 represents 41 decimal. signed binary number: the first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). example: 0101001 represents +41 decimal 1101001 represents ? 41 decimal two?s-complementary number: the first digit of positive numbers is ?0?, the rest of the number is a binary number. negative numbers start with ?1?. in order to calculate the absolute value of the number, calculate the complement of the remaining digits and add ?1?. example: 0101001 represents +41 decimal 1010111 represents ? 41 decimal table 5?4: micronas registers (read only for customers) table 5?3: available register addresses register code data bits format customer remark min-duty 1 10 binary read/write/program minimum duty cycle max-duty 2 11 binary read/write/program maximum duty cycle dcoq 3 11 two?s-compl. binary read/write/program output duty cycle at zero adc-readout dcsensitivity 4 14 signed binary read/write/program increase of output duty cycle with adc-readout mode 5 6 binary read/write/program range and filter settings lockr 6 1 binary lock lock bit for customer registers adc-readout 7 14 two?s-compl. binary read output of a/d converter (internal magnetic signal) tc 11 6 signed binary read/write/program temperature compensation coefficient tcsq 12 5 binary read/write/program temperature compensation coefficient register code data bits format remark offset 8 5 two?s-compl. binary adc offset adjustment foscad 9 5 binary oscillator frequency adjustment special 13 8 special settings
data sheet HAL810 micronas feb. 6, 2009; dsh000034_003en 29 5.5. register information min-duty the register range is from 0 up to 1023. ? the register value is calculated with: max-duty ? the register range is from 0 up to 2047. ? the register value is calculated with: dcoq ? the register range is from ? 1024 up to 1023. ? the register value is calculated with: dcsensitivity ? the register range is from ? 8192 up to 8191. ? the register value is calculated with: tc and tcsq ? the tc register range is from ? 31 up to 31. ? the tcsq register range is from 0 up to 31. please refer section 4.3. on page 23 for the recom- mended values. mode ? the register range is from 0 up to 63 and contains the settings for filter and range: please refer section 2.2. on page 8 for the available filter and range values. adc-readout ? this register is read only. ? the register range is from ? 8192 up to 8191. 5.6. programming information if the content of any register (except the lock registers) is to be changed, the desired value must first be writ- ten into the corresponding ram register. before read- ing out the ram register again, the register value must be permanently stored in the eeprom. permanently storing a value in the eeprom is done by first sending an erase command followed by sending a prom command. the address within the erase and prom commands is not important. erase and prom act on all registers in parallel. if all HAL810 registers are to be changed, all writing commands can be sent one after the other, followed by sending one erase and prom command at the end. during all communication sequences, the customer has to check if the communication with the sensor was successful. this means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. if the micronas programmer board is used, the customer has to check the error flags sent from the programmer board. note: for production and qualification tests, it is man- datory to set the lock bit after final adjustment and programming of HAL810. the lock func- tion is active after the next power-up of the sen- sor. micronas also recommends sending an additional erase command after sending the lock command. the success of the lock process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. electrostatic discharges (esd) may disturb the programming pulses. please take precautions against esd. min-duty 100% * 2048 min-duty = max-duty 100% * 2048 max-duty = dc oq 100% * 1024 dcoq = dcsensitivity = dcsensitivity * 2048 mode = filter * 8 + range
HAL810 data sheet 30 feb. 6, 2009; dsh000034_003en micronas micronas gmbh hans-bunte-strasse 19 ? d-79108 freiburg ? p.o. box 840 ? d-79008 freiburg, germany tel. +49-761-517-0 ? fax +49-761-517-2174 ? e-mail: docservice@micronas.com ? internet: www.micronas.com 6. data sheet history 1. data sheet: ?hal 810 programmable linear hall effect sensor?, aug. 16, 2002, 6251-536-1ds. first release of the data sheet. 2. data sheet: ?hal 810 programmable linear hall effect sensor?, nov. 22, 2002, 6251-536-2ds. sec- ond release of the data sheet. major changes: ? fig. 2?3: diagram ?details of eeprom and digital signal processing? changed ? fig. 2?5: diagram ?example for output characteris- tics? changed ? dcoq register programmable from ? 100% to 100% in steps of 0.0976% ? clamping function: minimum duty cycle programma- ble between 0% and 50% in steps of 0.0488%, max- imum duty cycle programmable between 0% and 100% in steps of 0.0488% ? changes in register information. 3. data sheet: ?hal 810 programmable linear hall effect sensor?, june 24, 2004, 6251-536-3ds. third release of the data sheet. major changes: ? new package diagram for to92ut-1 ? package diagram for to92ut-2 added ? ammopack diagrams for to92ut-1/-2 added ? section 4.2. "measurement of a pwm output sig- nal" added 4. data sheet: ?HAL810 programmable linear hall- effect sensor?, feb. 6, 2009, dsh000034_003en. fourth release of the data sheet. major changes: ? section 3.1. "outline dimensions" updated ? section 3.3. "positions of sensitive areas" updated ? section 3.5. "recommended operating conditions" updated ? section 3.6. "characteristics" updated ? section 4.1. "application circuit" updated ? section 4.5. "ambient temperature" updated 5. data sheet: ?HAL810 programmable linear hall- effect sensor?, feb. 6, 2009, dsh000034_003en. fifth release of the data sheet. major changes: ? package outline dimension diagram updated.

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